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Sub-mA/cm^2^ Dark Current Density, Buffer-Less Germanium (Ge) Photodiodes on a 200-mm Ge-on-Insulator Substrate by Yiding Lin; Bongkwon Son; Kwang Hong Lee; Jurgen Michel; Chuan Seng Tan is a Engineering article available to read on EtoBox.

What is Sub-mA/cm^2^ Dark Current Density, Buffer-Less Germanium (Ge) Photodiodes on a 200-mm Ge-on-Insulator Substrate about?

In recent years, Germanium (Ge) photodiodes have established a widespread utilization in photonic-integrated circuits (PICs). However, the devices commonly exhibit a prominent dark current due to the substantial defects at the Ge/Si heteroepitaxial interface. Herein, we demonstrate normal-incidence, buffer-less Ge vertical p-i-n photodiodes with remarkably low dark current density (J dark , 0.78 mA/cm 2 at -1 V), on a high-quality 200mm Ge-on-insulator (GOI) substrate. The high-quality GOI was achieved by the removal of the highly dislocated Ge/Si interfacial region, sequentially via wafer bonding, layer transfer, and oxygen (O 2 ) furnace annealing. Compared to un-annealed GOI, the threading dislocation density (TDD) in Ge was reduced by more than two orders of magnitude to 1.2 × 10 6 cm -2 . Correspondingly, the device J dark and bulk leakage (J bulk ) were reduced by ∼70× and ∼145×. On the other hand, the photodiodes present a reasonable responsivity of 0.29 A/W at 1,550 nm and a nearly 100% internal quantum efficiency without external bias. The specific detectivity (D \* , 2.17 × 10 10 cm • Hz 1/2 • W -1 at 1,550 nm and -0.1 V) is comparable with that of commercial bulk Ge phot

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Author

Yiding Lin; Bongkwon Son; Kwang Hong Lee; Jurgen Michel; Chuan Seng Tan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Published

2021

Language

EN

Field

Engineering (Physical Sciences)