Can I read Dislocation generation in GaN heteroepitaxy on EtoBox?

Dislocation generation in GaN heteroepitaxy by Wu, X.H; Fini, P; Tarsa, E.J; Heying, B; Keller, S; Mishra, U.K; DenBaars, S.P; Speck, J.S is a Engineering article available to read on EtoBox.

What is Dislocation generation in GaN heteroepitaxy about?

In this work, we study the microstructural evolution, with particular emphasis on threading dislocation (TD) generation, in the two-step metal-organic chemical vapor deposition (MOCVD) of GaN on sapphire. The MOCVD growths were carried out at atmospheric pressure in a horizontal two-flow reactor. Nominally, 200 A > thick nucleation layers (NL) were deposited at temperatures in the range 525-600°C followed by high temperature (HT) growth at 1060-1080°C. Throughout the different stages of growth, the microstructure was studied by transmission electron microscopy (TEM) and atomic force microscopy (AFM). Two growth conditions were closely studied: brief pre-growth ammonia exposure of the sapphire ('Material A') and extensive pre-growth ammonia exposure of the sapphire ('Material B'). The as-grown Material B NL has a &25 A > hexagonal GaN wetting layer followed by predominantly (1 1 1) oriented cubic GaN. After HT exposure, Material B NL predominantly transforms to hexagonal GaN and has TDs. These TDs propagate into the HT GaN and lead to a TD density of 2;10 after 1 m of HT growth. Material A NLs, before and after HT exposure, have rough morphologies and a high-degree-of-stacking disor

Who reads Dislocation generation in GaN heteroepitaxy?

Author

Wu, X.H; Fini, P; Tarsa, E.J; Heying, B; Keller, S; Mishra, U.K; DenBaars, S.P; Speck, J.S

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

1998

Language

EN

Field

Engineering (Physical Sciences)