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Residual Stress in Diamond Films: Origins and Modelling by J. Michler; M. Mermoux; Y. von Kaenel; A. Haouni; G. Lucazeau; E. Blank is a Engineering article available to read on EtoBox.

What is Residual Stress in Diamond Films: Origins and Modelling about?

The evolution of stress in diamond layers is investigated both experimentally and theoretically in order to develop a comprehensive view of the formation of residual stress. A compressive stress maximum associated with grain coalescence, a decreasing stress with increasing layer thickness and strong stress inhomogeneities at the level of the grain size are observed by in situ macro-and ex situ micro-Raman spectroscopy in diamond ®lms grown on silicon (001) substrates. For most diamond deposits on silicon, neglecting wafer bending for the calculation of thermal stress turns out to be an inappropriate approximation, but even the exact modelling of the thermal stress by means of plate theory and ®nite element calculations only explains a minor part of the observed stress. Detailed ®nite element calculations reveal that the average thermal stress, and the thermal stress distribution, are largely modi®ed by temperature gradients during deposition, and by ®lm morphology. Tensile stresses can form due to temperature gradients and surface roughness relaxes an essential part of the thermal stress. The expected average stresses are calculated for common cases. Stress measurements using micro

Who reads Residual Stress in Diamond Films: Origins and Modelling?

Author

J. Michler; M. Mermoux; Y. von Kaenel; A. Haouni; G. Lucazeau; E. Blank

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

1999

Language

EN

Field

Engineering (Physical Sciences)