About this scholarly article

Technical Digest., International Electron Devices Meeting - i-AlGaAs/n-GaAs doped-channel heterostructure insulated gate FET (DC-HIGFET) with n/sup +/-GaAs selectively grown by MOCVD by Takatani, S.; Shigeta, J. is a scholarly article available to read on EtoBox.

Author

Takatani, S.; Shigeta, J.

Publisher

IEEE

Published

1988