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Can I read Trap Controlled Minority-carrier Mobility in Heavily Doped Silicon on EtoBox?
Trap Controlled Minority-carrier Mobility in Heavily Doped Silicon by A. Neugroschel; F.A. Lindholm; C.T. Sah is a Engineering article available to read on EtoBox.
What is Trap Controlled Minority-carrier Mobility in Heavily Doped Silicon about?
The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (~102° cm -3) Si (Si:As) was investigated in the temperature range, 20 -350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed behavior. The activation energy is about 10 meV, which suggests that the localized states originate from band tails but does not rule out trapping at boron atoms in the compensated n + region.
Who reads Trap Controlled Minority-carrier Mobility in Heavily Doped Silicon?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- A. Neugroschel; F.A. Lindholm; C.T. Sah
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0379-6787)
- Published
- 1985
- Language
- EN
- Field
- Engineering (Physical Sciences)