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About this Engineering article
Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation by Ciobanu, Florin; Pensl, Gerhard; Afanas'ev, Valery V.; Schöner, Adolf is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ciobanu, Florin; Pensl, Gerhard; Afanas'ev, Valery V.; Schöner, Adolf
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2005
- Language
- EN
- Field
- Engineering (Physical Sciences)
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