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About this Engineering article
Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation by Okuno, Eiichi; Amano, Shinji is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Okuno, Eiichi; Amano, Shinji
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2002
- Field
- Engineering (Physical Sciences)