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Stress Concentration at an Elliptic Hole in Transversely Isotropic Piezoelectric Solids by Longchao Dai; Wanlin Guo; X. Wang is a Engineering article available to read on EtoBox.

What is Stress Concentration at an Elliptic Hole in Transversely Isotropic Piezoelectric Solids about?

Two-dimensional electroelastic analyses have been performed theoretically on a transversely isotropic piezoelectric material containing an elliptic hole, subjected to a uniform stress field and a uniform electric displacement field at infinity while the surface of the hole is free of traction and electrically open. Solutions are obtained by using the exact electric boundary condition based on the complex variation method. Explicit solutions for the distributions of the mechanical and electrical components on the rim of the elliptic hole are obtained. An interesting relationship between the stress concentration factor of an elliptic hole (K t ) and that of a circular hole (K t j t=1 ), K t 1⁄4 1 þ Ktj t1⁄41 À1 t , is found in both elastic and piezoelectric materials. It is shown that the electromechanical coupling effect is helpful to reduce the stress concentration. And the influence of the dielectric parameter of the medium inside the hole on the stresses and the concerned stress concentration factor at the surface of the hole is weak in a wide range of the dielectric parameter. Comparisons with available results show good coincidence.

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Author

Longchao Dai; Wanlin Guo; X. Wang

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0020-7683)

Published

2006

Language

EN

Field

Engineering (Physical Sciences)