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Observation of room temperature negative differential resistance (NDR) in organic light-emitting diode with inorganic dopant by Yean-Kuen Fang; Yen-Ting Chiang; Shih-Fang Chen; Chun-Yu Lin; Shui-Ching Hou; Chih-Sheng Hung; Tzong-Yow Tsai; Shiuan-Ho Chang; Tse-Heng Chou is a Materials Science article available to read on EtoBox.

What is Observation of room temperature negative differential resistance (NDR) in organic light-emitting diode with inorganic dopant about?

Room temperature negative differential resistance (NDR) current-voltage (I-V) curves with high peak-to-valley (PTV) current ratio (45) were observed first in organic light electroluminescence diodes (OLEDs). The OLED has the configuration of Al/Alq 3 (aluminum tris-(8-hydroxygninoline))/TPD (N,N 0 -diphenyl-N,N 0 -bis(3-methylphenyl)-1,l 0 -bipheny-4,4 0 -diamine)/indium tin oxide (ITO) with TDP doped with iodine (I 2 ) or nitrogen (N 2 ) as holes transport layer (HTL). The high PTV current ratio was achieved by evaporation of TPD under nitrogen gas ambient pressure 1 Â 10 À4 Torr and iodine powder in weight ratio 10/1. Under low bias, the recombination between the low-energy holes in the dopant-induced guest-hopping sites and the electrons in lowest unoccupied molecular orbital (LUMO) only generates low-energy phonons, which scatter the carriers, thus leading to the NDR phenomenon. However, for high voltage, the recombination generates high-energy photons, thus enhancing the OLEDs output luminance. The doping of iodine and nitrogen promotes output luminance of OLED to 480%/200% and 200%/165% in magnitude under bias of 7 V/10 V, respectively.

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Author
Yean-Kuen Fang; Yen-Ting Chiang; Shih-Fang Chen; Chun-Yu Lin; Shui-Ching Hou; Chih-Sheng Hung; Tzong-Yow Tsai; Shiuan-Ho Chang; Tse-Heng Chou
Publisher
Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0022-3697)
Published
2008
Language
EN
Field
Materials Science (Physical Sciences)

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