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Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy by Brubaker, Matt D.; Levin, Igor; Davydov, Albert V.; Rourke, Devin M.; Sanford, Norman A.; Bright, Victor M.; Bertness, Kris A. is a Physics and Astronomy article available to read on EtoBox.

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Author
Brubaker, Matt D.; Levin, Igor; Davydov, Albert V.; Rourke, Devin M.; Sanford, Norman A.; Bright, Victor M.; Bertness, Kris A.
Publisher
American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
Published
2011
Language
EN
Field
Physics and Astronomy (Physical Sciences)

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