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About this Physics and Astronomy article
Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy by Brubaker, Matt D.; Levin, Igor; Davydov, Albert V.; Rourke, Devin M.; Sanford, Norman A.; Bright, Victor M.; Bertness, Kris A. is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Brubaker, Matt D.; Levin, Igor; Davydov, Albert V.; Rourke, Devin M.; Sanford, Norman A.; Bright, Victor M.; Bertness, Kris A.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2011
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)