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This document discusses indium nitride, a semiconductor material with potential applications in solar cells and electronics. It has a bandgap of around 0.7 eV and can form alloys with gallium nitride spanning infrared to ultraviolet wavelengths. Research is being conducted into developing solar cells using indium gallium nitride, but challenges remain such as p-type doping and heteroepitaxial growth. Thin films of indium nitride can also be superconductive below 4 K under high magnetic fields.

Author

Raymond Leal

Language

EN