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This paper presents a computational study of a dual-material-gate graphene nanoribbon field-effect transistor (DMG-GNRFET) that utilizes heterogeneous gates with varying work functions to improve performance. The simulations demonstrate that the DMG-GNRFET exhibits enhanced ambipolar behavior and reduced off-current compared to conventional GNRFETs, while maintaining similar on-state characteristics. The study highlights the advantages of using graphene nanoribbons in transistor design to overcome limitatio

Author

Mainul Hossain

Language

EN