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This document reviews the application of Raman spectroscopy in characterizing defects and subsurface damages in micro/nano-machining. It discusses the principles of Raman spectroscopy, critical parameters affecting its performance, and its effectiveness in identifying issues such as stacking faults and residual stress in semiconductor materials. The review also highlights advancements like Tip-Enhanced Raman Spectroscopy (TERS) that enhance detection capabilities for weak damages.

Author

thang

Language

EN