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High Efficiency Silicon Solar Cells by plasma-CVD Method by Diani Ainun Nisa is a document available to read on EtoBox.
The substantial increase of the spectral response in longer wavelength has been observed and an increase of Voc has also been found. The formation technology, together with the low temperature grown thin a-Si emitter layer with appropriate bandgap, has enabled us to obtain a very high JsC / of 40. M a / c m 2. The present paper is to demonstrate that the low temperature deposition process, such as plasma-CVD method, is very effective for obtaining high efficiency silicon
- Author
- Diani Ainun Nisa
- Language
- EN