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Electrical and Thermal Transport Properties of Ge~1–~ ~x~ Pb ~x~ Cu ~y~ Sb ~y~ TeSe~2~ ~y~ by Yang Jin; Dudi Ren; Yuting Qiu; Li‐Dong Zhao is a Engineering article available to read on EtoBox.

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## Abstract Balancing the contradictory relationship between thermoelectric parameters, such as effective mass and carrier mobility, is a challenge to optimize thermoelectric performance. Herein, the exceptional thermoelectric performance is realized in GeTe through collaboratively optimizing the carrier and phonon transport via stepwise alloying Pb and CuSbSe~2~. The formation energy of Ge vacancy is efficiently bolstered by alloying Pb, which reduces carrier density and carrier scattering to maintain superior carrier mobility in GeTe. Additionally, CuSbSe~2~, acting as an n‐type dopant, further modulates carrier density and validly equilibrates carrier mobility and effective mass. Accordingly, the promising power factor of 45 μW cm^−1^ K^−2^ is achieved at 723 K. Meanwhile, point defects are found to significantly suppress phonons transport to descend lattice thermal conductivity by Pb and CuSbSe~2~ alloying, which barely impacts the carrier mobility. A combination with superior carrier mobility and lower lattice thermal conductivity, a maximum ZT of 2.2 is attained in Ge~0.925~Pb~0.075~Cu~0.005~Sb~0.005~TeSe~0.01~, which corresponds to a 100% promotion compared with that of intr

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Author

Yang Jin; Dudi Ren; Yuting Qiu; Li‐Dong Zhao

Publisher

Wiley

Published

2023

Language

EN

Field

Engineering (Physical Sciences)