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About this Engineering article
Memory characteristics of MOSFETs with densely stacked silicon nanocrystal Layers in the gate oxide synthesized by low-energy ion beam by Ng, C.Y.; Chen, T.P.; Ding, L.; Fung, S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ng, C.Y.; Chen, T.P.; Ding, L.; Fung, S.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2006
- Language
- EN
- Field
- Engineering (Physical Sciences)
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