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This document summarizes key concepts about semiconductor diodes: 1) It describes the PN junction, including the depletion region formation and built-in potential. Minority carrier injection under forward bias is explained using the law of the junction. 2) The width of the depletion region under equilibrium is derived. It depends on the built-in potential, permittivity, and doping concentrations. 3) Forward and reverse bias operations are analyzed. Under low injection and forward bias, the excess minor

Author

Oliver Perez

Language

EN