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Synthesis and Raman characterization of boron-doped single-walled carbon nanotubes by K. McGuire; N. Gothard; P.L. Gai; M.S. Dresselhaus; G. Sumanasekera; A.M. Rao is a Materials Science article available to read on EtoBox.

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A systematic study was carried out to dope single-walled carbon nanotube (SWNT) bundles with varying amounts of boron using the pulsed laser vaporization technique. Targets containing boron concentrations ranging from 0.5 to 10 at.% boron were prepared by mixing elemental boron with carbon paste and the Co/Ni catalysts. The laser-generated products that were obtained from these targets were characterized by high resolution transmission electron microscopy, electron energy loss spectroscopy (EELS), thermoelectric power (TEP) measurements, and Raman scattering experiments. Electron microscopy and Raman studies revealed that the presence of various levels of boron concentration in the target strongly affected the products that were prepared. SWNTs were found in the products prepared from targets containing up through 3 at.% boron, and high resolution EELS estimated that less than 0.05-0.1 at.% boron is present in the SWNT lattice. The absence of SWNT bundles in the products derived from targets containing more than 3 at.% boron implies that the presence of excess boron in the carbon plume severely inhibits the carbon nanotube growth. The overall effect of the boron incorporation prima

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Author

K. McGuire; N. Gothard; P.L. Gai; M.S. Dresselhaus; G. Sumanasekera; A.M. Rao

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0008-6223)

Published

2005

Language

EN

Field

Materials Science (Physical Sciences)