About this Materials Science article
Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step by Yang, Bing; Zhuang, Hao; Li, Junhao; Huang, Nan; Liu, Lusheng; Tai, Kaiping; Jiang, Xin is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Yang, Bing; Zhuang, Hao; Li, Junhao; Huang, Nan; Liu, Lusheng; Tai, Kaiping; Jiang, Xin
- Publisher
- Royal Society of Chemistry; The Royal Society of Chemistry; Royal Society of Chemistry (RSC) (ISSN 1466-8033)
- Published
- 2016
- Field
- Materials Science (Physical Sciences)