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About this Engineering article
Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination by Dautrich, Morgan S.; Lenahan, Patrick M.; Lelis, Aivars J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Dautrich, Morgan S.; Lenahan, Patrick M.; Lelis, Aivars J.
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2006
- Language
- EN
- Field
- Engineering (Physical Sciences)
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