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About this Physics and Astronomy article
Improved interface properties of an HfO2gate dielectric GaAs MOS device by using SiNxas an interfacial passivation layer by Zhu, Shu-Yan; Xu, Jing-Ping; Wang, Li-Sheng; Huang, Yuan is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Zhu, Shu-Yan; Xu, Jing-Ping; Wang, Li-Sheng; Huang, Yuan
- Publisher
- IOP Publishing; Institute of Physics Publishing (ISSN 1674-1056)
- Published
- 2013
- Field
- Physics and Astronomy (Physical Sciences)
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