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About this Engineering article
Lateral RF SOI power MOSFETs with f/sub T/ of 6.9 GHz by Shenai, K.; McShane, E.; Leong, S.K. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Shenai, K.; McShane, E.; Leong, S.K.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)