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What is Ultralow RON,sp Quasi-Vertical DMOSFET about?
The research paper presents a novel Quasi-Vertical Double-Diffused MOSFET (QVDMOS) with a Split-Gate Trench structure aimed at achieving ultralow specific ON-state resistance while ensuring compatibility with the Bipolar-CMOS-DMOS process. Key innovations include a quasi-vertical structure, asymmetric gate oxide thickness, and significant performance improvements, with a specific ON-state resistance of 11.07 mΩ·mm², which is 39.0% lower than traditional limits. The QVDMOS is particularly suited for power co
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