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Refraction properties of PECVD of silicon nitride film by Byungwhan Kim; Dong Won Kim; Seung Soo Han is a Engineering article available to read on EtoBox.

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Using a neural network, the refractive index of a film deposited in a plasma enhanced chemical vapor deposition is characterized. The deposition process was characterized by a 2 6-1 fractional factorial experiment. Experimental variables and ranges include 20-40 W radio frequency (RF) power, 80-160 Pa pressure, 180-260 sccm SiH 4 flow rate, 1-1.4 sccm NH 3 flow rate, 0-1000 sccm N 2 flow rate, and 200-300 C substrate temperature. To examine the effect of the interaction between variables on the refractive index, a predictive neural network model was constructed. Prediction accuracy was optimized as a function of training factors. Model predictions were certified experimentally. Many complex interactions between the variables not reported previously were revealed. The power effect was transparent only in such plasma conditions as high SiH 4 or NH 3 flow rate. The temperature effect was conspicuous under high pressure. Deposition mechanisms were qualitatively estimated in conjunction with the reported linear dependency of refractive index on SiH/NH ratio.

Who reads Refraction properties of PECVD of silicon nitride film?

Author

Byungwhan Kim; Dong Won Kim; Seung Soo Han

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)

Published

2004

Language

EN

Field

Engineering (Physical Sciences)