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What is CMOS Circuit Simulation with LIM Method about?

This paper presents the Latency Insertion Method (LIM) for fast simulation of CMOS circuits, particularly focusing on its application to CMOS inverters and NAND circuits. The authors discuss existing techniques and propose modifications to improve accuracy by considering multiple states of operation. The results demonstrate that the LIM algorithm can effectively reduce simulation time while maintaining accuracy compared to traditional SPICE-like methods.

Author

Emilie Vérone

Language

EN