About this scholarly article

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Design of an 80V-class high-side capable double-resurf JI L-IGBT by Fujii, Hiroki; Komatsu, Shinichi; Sato, Masaharu; Ichikawa, Toshihiko is a scholarly article available to read on EtoBox.

Author

Fujii, Hiroki; Komatsu, Shinichi; Sato, Masaharu; Ichikawa, Toshihiko

Publisher

IEEE

Published

2011

Language

EN