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This paper explores the efficiency improvements of three-phase active front-end Boost PWM rectifiers using silicon carbide (SiC) power semiconductor devices compared to traditional silicon (Si) devices. The study demonstrates that SiC MOSFETs can achieve approximately 1.2% higher efficiency than all-Si devices and 0.5% more than hybrid Si IGBT and SiC diode configurations due to lower switching and conduction losses. The findings suggest that SiC devices offer significant advantages for power conversion app

Author

Carlos Ochoa

Language

EN