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MOSFET Scaling and Velocity Saturation by Arighna Basak is a document available to read on EtoBox.

This document discusses MOSFET scaling and some of its effects. It can be summarized as follows: 1. MOSFETs have been steadily miniaturized over time from the 1970s (~10 μm) to today (~30 nm) to improve circuit speed and increase device density and lower costs. 2. As MOSFETs are scaled down, the drain current (IDsat) increases and gate/junction capacitances decrease, leading to faster circuit operation. 3. However, scaling also introduces challenges like velocity saturation limiting drain current and s

Author
Arighna Basak
Language
EN