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About this Engineering article
GaN Schottky barrier diodes with nickel nitride anodes sputtered at different nitrogen partial pressure by Li, Xiaobo; Pu, Taofei; Taiki, Hoshi; Zhang, Tong; Xie, Tian; Luke Fujiwara, Shigeki Joseph; Kitahata, Hiroshi; Li, Liuan; Kobayashi, Sachio; Ito, Motoo; Li, Xianjie; Ao, Jin-Ping is a Engineering article available to read on EtoBox.
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- Author
- Li, Xiaobo; Pu, Taofei; Taiki, Hoshi; Zhang, Tong; Xie, Tian; Luke Fujiwara, Shigeki Joseph; Kitahata, Hiroshi; Li, Liuan; Kobayashi, Sachio; Ito, Motoo; Li, Xianjie; Ao, Jin-Ping
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)
- Published
- 2019
- Language
- EN
- Field
- Engineering (Physical Sciences)