About this scholarly article

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Effect of reverse bias annealing on the properties of AlGaN/GaN MIS-HEMTs with recessed-gate structure by Gamachi, W.; Ishii, K.; Asubar, J. T.; Tokuda, H.; Kuzuhara, M. is a scholarly article available to read on EtoBox.

Author

Gamachi, W.; Ishii, K.; Asubar, J. T.; Tokuda, H.; Kuzuhara, M.

Publisher

IEEE

Published

2017

Language

EN