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About this Materials Science article
C-V and J-V investigation of HfO 2 /Al 2 O 3 bilayer dielectrics MOSCAPs on (100) β -Ga 2 O 3 by Dong, Hang; Mu, Wenxiang; Hu, Yuan; He, Qiming; Fu, Bo; Xue, Huiwen; Qin, Yuan; Jian, Guangzhong; Zhang, Ying; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Dong, Hang; Mu, Wenxiang; Hu, Yuan; He, Qiming; Fu, Bo; Xue, Huiwen; Qin, Yuan; Jian, Guangzhong; Zhang, Ying; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming
- Publisher
- American Institute of Physics; American Institute of Physics Inc.; Melville NY: American Institute of Physics; AIP Publishing (ISSN 2158-3226)
- Published
- 2018
- Language
- EN
- Field
- Materials Science (Physical Sciences)