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About this Engineering article
Reduced leakage current and improved breakdown voltage of silicon oxide films deposited in low energy RF discharges at room temperature by Wu, Ming-Shing; Bao, Tien-I; I, Lin is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Wu, Ming-Shing; Bao, Tien-I; I, Lin
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 1992
- Field
- Engineering (Physical Sciences)