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A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation by Lundberg, Theodor; Li, Jing; Hutin, Louis; Bertrand, Benoit; Ibberson, David J.; Lee, Chang-Min; Niegemann, David J.; Urdampilleta, Matias; Stelmashenko, Nadia; Meunier, Tristan; Robinson, Jason W. A.; Ibberson, Lisa; Vinet, Maud; Niquet, Yann-Michel; Gonzalez-Zalba, M. Fernando is a scholarly article available to read on EtoBox.

What is A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation about?

Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quantum dots, accurately identifying when singlet-triplet blockade occurs is hence of major importance for scalable qubit readout. In this work, we present a description of spin blockade physics in a tunnel-coupled silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based magnetospectroscopy, we report successive steps of spin blockade and spin blockade lifting involving spin states with total spin angular momentum up to $S=3$. More particularly, we report the formation of a hybridized spin quintet state and show triplet-quintet and quintet-septet spin blockade. This enables studies of the quintet relaxation dynamics from which we find $T_1 \sim 4 ~\mu s$. Finally, we develop a quantum capacitance model that can be applied generally to reconstruct the energ

Author

Lundberg, Theodor; Li, Jing; Hutin, Louis; Bertrand, Benoit; Ibberson, David J.; Lee, Chang-Min; Niegemann, David J.; Urdampilleta, Matias; Stelmashenko, Nadia; Meunier, Tristan; Robinson, Jason W. A.; Ibberson, Lisa; Vinet, Maud; Niquet, Yann-Michel; Gonzalez-Zalba, M. Fernando

Published

2019

Language

EN