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About this Physics and Astronomy article
High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+p junction devices by Blanco, M. N.; Redondo, E.; Calle, F.; Mártil, I.; González-Díaz, G. is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Blanco, M. N.; Redondo, E.; Calle, F.; Mártil, I.; González-Díaz, G.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2000
- Field
- Physics and Astronomy (Physical Sciences)
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