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Flux ionization of arc-like Ti vapor plasma by H Kajioka is a Engineering article available to read on EtoBox.

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## Arc-like Ti vapor plasma is formed on the electron beam evaporator by applying low dc voltage to an anode near the evaporator. Deposition rate (Rd), substrate ion current density (J,) and anode current (I,) were simultaneously measured by changing: (I! anode voltage fV,l at the constant EB gun power 4.05kW; and ( ) source-to-substrate distance (distance rl at V, 30 V and I, 60A. With an increase in V, from 15 to 35 V, Rd 2.6nm/s decreases only slightly, while I, and J, increases from 40 to 90A and from 72 to 40A/m2, respectively, at distance r 0.45 m. With a decrease in distance r from 0.52 to 0.15 m, Rd and J, increase from 2.0 to 40 rim/s and from 24 to 420A/m2, respectively, (the measured values being mean values). The calculated mean values for flux ionization increase from 40 to 160% for condition (I!, and are approximately 120% in all cases for condition (2). The latter suggests collisionless expansion of Ti ions. At this high flux ionization with no biased substrate, self-ion bombardment is more effective for Ti film densification than Ar ion bombardment.

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Author

H Kajioka

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)

Published

1997

Language

EN

Field

Engineering (Physical Sciences)