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About this Engineering article
Drain Voltage Induced Barrier Increasing of Quantum-wire Transistors by Reitzenstein, S.; Worschech, L.; Hartmann, D.; Forchel, A. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Reitzenstein, S.; Worschech, L.; Hartmann, D.; Forchel, A.
- Publisher
- The Institution of Electrical Engineers; Institution of Electrical Engineers; Institute of Electrical Engineers; Institution of Engineering and Technology (IET) (ISSN 0013-5194)
- Published
- 2004
- Field
- Engineering (Physical Sciences)
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