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About this Engineering article
Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric by Wu, L.; Yu, H. Y.; Li, X.; Pey, K. L.; Pan, J. S.; Chai, J. W.; Chiu, Y. S.; Lin, C. T.; Xu, J. H.; Wann, H. J.; Yu, X. F.; Lee, D. Y.; Hsu, K. Y.; Tao, H. J. is a Engineering article available to read on EtoBox.
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- Author
- Wu, L.; Yu, H. Y.; Li, X.; Pey, K. L.; Pan, J. S.; Chai, J. W.; Chiu, Y. S.; Lin, C. T.; Xu, J. H.; Wann, H. J.; Yu, X. F.; Lee, D. Y.; Hsu, K. Y.; Tao, H. J.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2010
- Field
- Engineering (Physical Sciences)