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MBE GaN grown on (101) NdGaO3 substrates by V.V. Mamutin; A.A. Toropov; N.F. Kartenko; S.V. Ivanov; A. Wagner; B. Monemar is a Materials Science article available to read on EtoBox.

What is MBE GaN grown on (101) NdGaO3 substrates about?

We investigate the structure, morphology and optical properties of gallium nitride (GaN) films deposited on (101) neodium gallate (NdGaO 3 ) substrates by molecular beam epitaxy. Scanning electron microscopy, X-ray diffraction, photoluminescence and capacity-voltage measurements are used for the films characterization. Comparison of the GaN/NdGaO 3 layer properties with those of GaN films grown on (0001) sapphire substrates has revealed the higher luminescence efficiency of the former.

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Author

V.V. Mamutin; A.A. Toropov; N.F. Kartenko; S.V. Ivanov; A. Wagner; B. Monemar

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)

Published

1999

Language

EN

Field

Materials Science (Physical Sciences)