About this scholarly article

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - 3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory by Verreck, D.; Arreghini, A.; Schanovsky, F.; Stanojevic, Z.; Steiner, K.; Mitterbauer, F.; Karner, M.; Van den bosch, G.; Furnemont, A. is a scholarly article available to read on EtoBox.

Author

Verreck, D.; Arreghini, A.; Schanovsky, F.; Stanojevic, Z.; Steiner, K.; Mitterbauer, F.; Karner, M.; Van den bosch, G.; Furnemont, A.

Publisher

IEEE

Published

2019