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RETRACTED: P-type Zno thin films fabricated by Al–N co-doping method at different substrate temperature by Guodong Yuan; Zhizhen Ye; Qing Qian; Liping Zhu; Jingyun Huang; Binghui Zhao is a Engineering article available to read on EtoBox.

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P-type conduction in ZnO thin films was realized by Al-N co-doping method. ZnO thin films were prepared in NH 3 -O 2 atmosphere with the substrate temperature in the range of 360-600 1C with a 20 1C space. The conduction type of Al-N co-doped ZnO thin films are dependant greatly on the growth temperature. With Al and N co-doping technique, we have observed a room temperature resistivity of 24.5 O cm and a hole concentration of 7.48 Â 10 17 cm À3 in ZnO thin films on sapphire substrate. Secondary ion mass spectroscopy (SIMS) tests proved that the presence of Al facilitated the incorporation of N into ZnO. A model showing nitrogen and aluminium incorparation suggests the difficulty of realizing p-type ZnO thin films of both high hole concentration and low resistivity by the Al-N co-doping method. X-ray diffraction (XRD) measurements showed that crystillinity of the Al-N co-doped ZnO thin films are also very dependant on the substrate temperature.

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Author

Guodong Yuan; Zhizhen Ye; Qing Qian; Liping Zhu; Jingyun Huang; Binghui Zhao

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2005

Language

EN

Field

Engineering (Physical Sciences)