Opening book details…
About this Physics and Astronomy article
Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors by Vasallo, B. G.; Rodilla, H.; González, T.; Moschetti, G.; Grahn, J.; Mateos, J. is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Vasallo, B. G.; Rodilla, H.; González, T.; Moschetti, G.; Grahn, J.; Mateos, J.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2010
- Field
- Physics and Astronomy (Physical Sciences)
More by Vasallo, B. G.; Rodilla, H.; González, T.; Moschetti, G.; Grahn, J.; Mateos, J.
Browse all works by Vasallo, B. G.; Rodilla, H.; González, T.; Moschetti, G.; Grahn, J.; Mateos, J.