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The Open-circuit Voltage in Microcrystalline Silicon Solar Cells of Different Degrees of Crystallinity by Madhumita Nath; P. Roca i Cabarrocas; E.V. Johnson; A. Abramov; P. Chatterjee is a Engineering article available to read on EtoBox.

What is The Open-circuit Voltage in Microcrystalline Silicon Solar Cells of Different Degrees of Crystallinity about?

We have used a detailed electrical-optical computer model (ASDMP) in conjunction with the experimental characterization of microcrystalline silicon thin-film solar cells of different degrees of crystallinity (but having identical P-and N-layers) to understand the observed decrease of the open-circuit voltage with increasing crystalline fraction. In order to model all aspects of the experimental current density-voltage and quantum efficiency characteristics of cells having low (~75%) and high (over 90%) crystalline fraction, we had to assume both a higher mobility gap defect density and a lower band gap for the more crystallized material. The former fact is widely known to bring down the open-circuit voltage. Our calculations also reveal that the proximity of the quasi-Fermi levels to the energy bands in the cell based on highly crystallized (and assumed to have a lower band gap) microcrystalline silicon results in higher free and trapped carrier densities in this device. The trapped hole population is particularly high at and close to the P/I interface on account of the higher inherent defect density in this region and the fact that the hole quasi-Fermi level is close to the valenc

Who reads The Open-circuit Voltage in Microcrystalline Silicon Solar Cells of Different Degrees of Crystallinity?

It is typically read by researchers, students, and practitioners in Engineering.

Author
Madhumita Nath; P. Roca i Cabarrocas; E.V. Johnson; A. Abramov; P. Chatterjee
Publisher
Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
Published
2008
Language
EN
Field
Engineering (Physical Sciences)

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