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Optimization of p-dopant profiles for GaInAsP MQW laser structures in MOMBE by P. Kröner; H. Baumeister; J. Rieger; E. Veuhoff; M. Popp; H. Heinecke is a Engineering article available to read on EtoBox.

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For industrial device fabrication gaseous dopant sources are preferred in metalorganic growth technologies. Both in metalorganic vapor phase epitaxy (MOVPE) and metalorganic molecular beam epitaxy (MOMBE/CBE) diethylzinc is used. For doping of InP based ridge waveguide laser structures the critical parts are the active region with GaInAsP confinement layers, MQW layers and the p-type region with InP spacer layer, GaInAsP etch stop layer and InP cladding layer. Growing Zn doped InP in between GaInAsP layers leads to a significant Zn diffusion into the adjacent GaInAsP layers. This effect is much more pronounced in MOMBE than in MOVPE. It is demonstrated how this effect is reduced by insertion of additional intermediate layers with appropriate dopant concentration, and by compensating Si co-doping in the spacer and adjacent layers taking advantage of the Fermi level effect. Applying these techniques, reduced threshold current densities and improved high temperature performance can be obtained. The results are discussed by models of dopant diffusion in MOMBE in comparison to MOVPE.

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Author

P. Kröner; H. Baumeister; J. Rieger; E. Veuhoff; M. Popp; H. Heinecke

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

1998

Language

EN

Field

Engineering (Physical Sciences)