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VO2 Film Analysis: ALD vs. Sputtering by abhishekanand.rs.che19 is a document available to read on EtoBox.
The document discusses the physical analysis of VO2 films grown by Atomic Layer Deposition (ALD) and RF Magnetron Sputtering, highlighting their metal-insulator transition (MIT) behavior at approximately 67°C. It details the fabrication process, including the use of a new precursor for ALD and the importance of post-annealing conditions to achieve the desired crystalline VO2 phase. The study emphasizes the potential applications of VO2 films in smart windows, microelectronics, and optical sensors due to the
- Author
- abhishekanand.rs.che19
- Language
- EN