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Can I read Heteroepitaxial Growth of Tungsten Oxide Films on Sapphire for Chemical Gas Sensors on EtoBox?
Heteroepitaxial Growth of Tungsten Oxide Films on Sapphire for Chemical Gas Sensors by S.C Moulzolf; L.J LeGore; R.J Lad is a Engineering article available to read on EtoBox.
What is Heteroepitaxial Growth of Tungsten Oxide Films on Sapphire for Chemical Gas Sensors about?
The performance of chemiresistive gas sensors made from semiconducting metal oxide films is influenced by film stoichiometry, crystallographic structure, surface morphology and defect structure. To obtain well-defined microstructures, heteroepitaxial WO 3 films were grown on r-cut and c-cut single crystal sapphire substrates using rf magnetron AryO reactive sputtering of a W target. 2 On r-cut sapphire, an epitaxial tetragonal WO phase is produced at a 4508C deposition temperature whereas 6508C growth 3 stabilizes an epitaxial monoclinic WO phase. On c-cut sapphire, a metastable hexagonal WO phase is formed. RHEED and X-3 3 ray diffraction indicate that the films have a 'polycrystalline epitaxial structure' in which several grains are present, each having the same crystallographic orientation. STM analysis of the film surfaces reveals morphological features that appear to be derived from the substrate symmetries. The monoclinic phase has a stepyterrace growth structure, has the smallest mosaic spread in XRD rocking curves and exhibits the highest degree of reproducibility suggesting that it is the best suited for sensor applications. Measurements of film conductivity versus tempera
Who reads Heteroepitaxial Growth of Tungsten Oxide Films on Sapphire for Chemical Gas Sensors?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- S.C Moulzolf; L.J LeGore; R.J Lad
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2001
- Language
- EN
- Field
- Engineering (Physical Sciences)