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Can I read Molecular Simulation: a Microscopic Approach to Study the Growth of Native Silicon Oxide on EtoBox?

Molecular Simulation: a Microscopic Approach to Study the Growth of Native Silicon Oxide by V.V. Pham; R. Razafindratsita; J.J. Simonne is a Materials Science article available to read on EtoBox.

What is Molecular Simulation: a Microscopic Approach to Study the Growth of Native Silicon Oxide about?

An atomic scale model is used to study the dynamics of oxide growth on an Si substrate with and without point defects. The results obtained on an ideal Si substrate have been reported already and have been shown to be consistent with experimental data. This paper analyses the Si point defects behaviour and their effect on the thickness and the "roughness" of the oxide atomic layers during Si oxidation.

Who reads Molecular Simulation: a Microscopic Approach to Study the Growth of Native Silicon Oxide?

It is typically read by researchers, students, and practitioners in Materials Science.

Author
V.V. Pham; R. Razafindratsita; J.J. Simonne
Publisher
Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)
Published
1993
Language
EN
Field
Materials Science (Physical Sciences)

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