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Effective density-of-states approach to QM correction in MOS structures by Yutao Ma; Zhijian Li; Litian Liu; Lilin Tian; Zhiping Yu is a Engineering article available to read on EtoBox.

What is Effective density-of-states approach to QM correction in MOS structures about?

MOS structure threshold voltage shift due to quantum mechanical eects (QMEs) has a substantial in ̄uence on deep-submicron MOSFET characteristics. However, its physical nature has not been thoroughly investigated and an analytical model is absent. In this paper, a numerical solution of the SchroÈ dinger equation with parabolic potential well and an analytical solution with triangular well are compared, and the validity of the triangular well approximation is veri®ed. Based on the calculation of the subband structure in the quantized region in a weak inversion regime, the concepts of surface layer eective density-of-states (SLEDOS) is proposed. Carrier distribution in subbands is then analyzed and physical base of MOSFETs V th shift due to QMEs are discussed. The single subband occupation approximation used in earlier works is proved to be invalid and a new analytical threshold voltage (V th ) shift model due to QMEs including multisubband occupation is derived based on the concept of SLEDOS. The model reveals the physical nature of QMEs on V th shift and gives consistent results with experiments and self-consistent calculation.

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Author

Yutao Ma; Zhijian Li; Litian Liu; Lilin Tian; Zhiping Yu

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

2000

Language

EN

Field

Engineering (Physical Sciences)