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About this Engineering article
Accurate Modeling of Direct Tunneling Hole Current in P-metal–oxide–semiconductor Devices by Haque, A.; Alam, K. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Haque, A.; Alam, K.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2002
- Field
- Engineering (Physical Sciences)