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What is Diode Efficiency and Performance Analysis about?

The document discusses advancements in the efficiency and output power of GaAs avalanche diodes, achieving a maximum efficiency of 19 percent and output power of 12 W at 12 GHz. It acknowledges contributions from various researchers and highlights the importance of material quality in diode performance. Additionally, it introduces a method to incorporate the Early effect into the Ebers-Moll model for better transistor behavior simulation.

Author

thomas.dave.be

Language

EN