Can I read EPR identification of intrinsic defects in SiC on EtoBox?

EPR identification of intrinsic defects in SiC by J. Isoya; T. Umeda; N. Mizuochi; N. T. Son; E. Janzén; T. Ohshima is a Physics and Astronomy article available to read on EtoBox.

What is EPR identification of intrinsic defects in SiC about?

## Abstract The structure determination of intrinsic defects in 4H‐SiC, 6H‐SiC, and 3C‐SiC by means of EPR is based on measuring the angular dependence of the ^29^Si/^13^C hyperfine (HF) satellite lines, from which spin densities, sp‐hybrid ratio, and p‐orbital direction can be determined over major atoms comprising a defect. In most cases, not only the assignment of the variety due to the inequivalent sites (__h__ ‐ and __k__ ‐sites in 4H‐SiC) but also the identification of the defect species is accomplished through the comparison of the obtained HF parameters with those obtained from __first principles__ calculations. Our works of identifying vacancy‐related defects such as the monovacancies, divacancies, and antisite‐vacancy pairs in 4H‐SiC are reviewed. In addition, it is demonstrated that the observation of the central line of the T~V2a~ center of __S__ = 3/2 has been achieved by pulsed‐ELDOR. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads EPR identification of intrinsic defects in SiC?

Author

J. Isoya; T. Umeda; N. Mizuochi; N. T. Son; E. Janzén; T. Ohshima

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)

Published

2008

Language

EN

Field

Physics and Astronomy (Physical Sciences)